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雑誌Japanese journal of applied physics : JJAP
Volume number50(4-1)-50(4-2):2011.4
ArticleEffects of...

Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes (Special issue: Solid state devices and materials)

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Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes

(Special issue: Solid state devices and materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
11076911
Material type
記事
Author
Tae-Youb Kimほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2011-04
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 50(4) (2) 2011.4
Publication Page
p.04DG11-1～3
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Paper

Material Type
記事
Title
Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes
Author/Editor
Tae-Youb Kim
Nae-Man Park
Cheol-Jong Choi 他
Series Title
Special issue: Solid state devices and materials
Author Heading
Tae-Youb Kim
Nae-Man Park
Cheol-Jong Choi
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
50(4) (2) 2011.4
Volume
50
Issue
4
Other Volume
2