大口径SiC単結晶基板の開発動向 (小特集パワー半導体結晶成長)

大口径SiC単結晶基板の開発動向

(小特集パワー半導体結晶成長)

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Material Type: 記事
Title: 大口径SiC単結晶基板の開発動向
Author/Editor: 大谷昇
Series Title: 小特集パワー半導体結晶成長
Author Heading: 大谷昇
Alternative Title: Present status and prospects of large diameter SiC single crystal substrates
Periodical title: Journal of the Vacuum Society of Japan = 真空
No. or year of volume/issue: 54(6) 2011.6
Volume: 54
Issue: 6
Pages: 339～345
Publication date of volume/issue (W3CDTF): 2011-06
ISSN (Periodical Title): 1882-2398
ISSN-L (Periodical Title): 1882-2398
Publication (Periodical Title): 東京 : 日本真空協会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN15
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-474
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 11189139
http://id.ndl.go.jp/bib/11189139
Bibliographic Record Category (NDL): 632