Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials

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Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4060012
Material type
記事
Author
Stefan Bengtssonほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1996-08
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 35(8) 1996.08
Publication Page
p.4175~4181
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Detailed bibliographic record

Summary, etc.:

Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipati...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Stefan Bengtsson
Mats Bergh
Manolis Choumas 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
35(8) 1996.08
Volume
35
Issue
8
Pages
4175~4181
Publication date of volume/issue (W3CDTF)
1996-08