減圧アニール法によるゾルゲルSrBi2Ta2O9薄膜の低温形成(ULSI用高誘電体・強誘電体薄膜材料技術)

Journal name: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems 117(3) 1997.02

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Material Type: 記事
Title: 減圧アニール法によるゾルゲルSrBi2Ta2O9薄膜の低温形成
Author/Editor: 牛久保真帆
横山誠一
伊藤康幸他
Series Title: ULSI用高誘電体・強誘電体薄膜材料技術
Author Heading: 牛久保真帆
横山誠一
伊藤康幸
Periodical title: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
No. or year of volume/issue: 117(3) 1997.02
Volume: 117
Issue: 3
Pages: 227～232
Publication date of volume/issue (W3CDTF): 1997-02
ISSN (Periodical Title): 0385-4221
ISSN-L (Periodical Title): 0385-4221
Publication (Periodical Title): 東京 : 電気学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-795
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 4149759
http://id.ndl.go.jp/bib/4149759
Bibliographic Record Category (NDL): 632