Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen(nMOSFET/SIMOX)
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- Material Type
- 記事
- Author/Editor
- Toshihiko IshiyamaYasuhisa Omura
- Author Heading
- Periodical title
- Japanese journal of applied physics. Pt. 2, Letters
- No. or year of volume/issue
- 36(3A) 1997.03
- Volume
- 36
- Issue
- 3A
- Pages
- L264～L267
- Publication date of volume/issue (W3CDTF)
- 1997-03