Characteristics of the Electric Capacitance and Dielectric Loss of the Thermal Oxide of Porous Silicon Formed Using Highly Phosphorus Diffused Silicon

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Characteristics of the Electric Capacitance and Dielectric Loss of the Thermal Oxide of Porous Silicon Formed Using Highly Phosphorus Diffused Silicon

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4187839
Material type
記事
Author
Yoshinobu Aritaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1997-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36(3A) 1997.03
Publication Page
p.1035~1039
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Detailed bibliographic record

Summary, etc.:

The anodic reaction condition dependence and the oxidation time dependence of the electric capacitance and the dielectric loss factor have been invest...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Yoshinobu Arita
Kunihiro Kuranari
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
36(3A) 1997.03
Volume
36
Issue
3A
Pages
1035~1039
Publication date of volume/issue (W3CDTF)
1997-03