Indium Doped nMOSFETs and Buried Channel pMOSFETs with n+ Polysilicon Gate (Solid State Devices and Materials)
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- Material Type
- 記事
- Author/Editor
- Yeong-Taek LeeKi-Whan SongByung-Gook Park 他
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 36(3B) 1997.03
- Volume
- 36
- Issue
- 3B
- Pages
- 1341～1345