GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure (Solid State Devices and Materials)

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GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure(Solid State Devices and Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4196737
Material type
記事
Author
Noriyuki Ohnokiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1997-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36(3B) 1997.03
Publication Page
p.1896~1899
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Detailed bibliographic record

Summary, etc.:

An AlAs oxide current confinement structure based on an InP substrate has been demonstrated for the first time to realize low threshold long wavelengt...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Noriyuki Ohnoki
Nobuaki Hatori
Akimasa Mizutani 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
36(3B) 1997.03
Volume
36
Issue
3B
Pages
1896~1899