Spontaneous Formation of Nanostructures in InxGa1-xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates (Solid State Devices and Materials)

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Spontaneous Formation of Nanostructures in InxGa1-xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates(Solid State Devices and Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4196748
Material type
記事
Author
Pablo O. Vaccaroほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1997-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36(3B) 1997.03
Publication Page
p.1948~1954
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Detailed bibliographic record

Summary, etc.:

In<SUB>x</SUB> Ga<SUB>1-x</SUB> As was deposited by molecular beam epitaxy on GaAs substrates with various orientations. We found that an In<SUB>0.5</...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Pablo O. Vaccaro
Kazuhisa Fujita
Toshihide Watanabe
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
36(3B) 1997.03
Volume
36
Issue
3B
Pages
1948~1954