Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on(311)B-GaAs Substrate (The 4th International Colloquium on Scanning Tunneling Microscopy)

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Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on(311)B-GaAs Substrate(The 4th International Colloquium on Scanning Tunneling Microscopy)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4260246
Material type
記事
Author
Hidehiko Kamadaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1997-06
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36(6B) 1997.06
Publication Page
p.4194~4198
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Detailed bibliographic record

Summary, etc.:

Single-dot photoluminescence measurements are undertaken on a number of individual InGaAs disks spontaneously formed on the GaAs-(311)B face. Well-iso...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hidehiko Kamada
Jiro Temmyo
Masaya Notomi 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
36(6B) 1997.06
Volume
36
Issue
6B
Pages
4194~4198