New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD n-MOSFET′s

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New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD n-MOSFET′s

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4473543
Material type
記事
Author
C.M. Yihほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1998-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 37(3B) 1998.03
Publication Page
p.1035~1040
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Detailed bibliographic record

Summary, etc.:

In this paper, the hot carrier degradation mechanisms in lightly-doped drain (LDD) n-MOS devices with silicon nitride spacer have been investigated. A...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
C.M. Yih
C.L. Wang
Steve S. Chung 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
37(3B) 1998.03
Volume
37
Issue
3B
Pages
1035~1040
Publication date of volume/issue (W3CDTF)
1998-03