Characterization of Dopant Interdiffusion and Power Reduction on TiSi2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

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Characterization of Dopant Interdiffusion and Power Reduction on TiSi2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4473699
Material type
記事
Author
Jiro Idaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1998-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 37(4A) 1998.04
Publication Page
p.1674~1679
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Detailed bibliographic record

Summary, etc.:

The TiSi<SUB>2</SUB> local wiring technology has been newly characterized from the viewpoints of dopant interdiffusion and power reduction. It was fou...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Jiro Ida
Atsushi Ohtomo
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
37(4A) 1998.04
Volume
37
Issue
4A
Pages
1674~1679
Publication date of volume/issue (W3CDTF)
1998-04