Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

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Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
4538242
Material type
記事
Author
Hideki Takagiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
1998-07
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 37(7) 1998.07
Publication Page
p.4197~4203
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Detailed bibliographic record

Summary, etc.:

Using Ar beam etching in vacuum, strong bonding of Si wafers is attained at room temperature. With appropriate etching time, the bonding occurs sponta...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hideki Takagi
Ryutaro Maeda
Teak Ryong Chung 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
37(7) 1998.07
Volume
37
Issue
7
Pages
4197~4203
Publication date of volume/issue (W3CDTF)
1998-07