高密度に形成されたInAs/GaAs量子ドット集合体の発光特性

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Material Type: 記事
Title: 高密度に形成されたInAs/GaAs量子ドット集合体の発光特性
Author/Editor: 原邦彦
P.O. Vaccaro
大西一洋他
Author Heading: 原邦彦
P.O. Vaccaro
大西一洋
Periodical title: 甲南大学紀要. 理学編 / 甲南大学編
No. or year of volume/issue: 46(1) 1999
Volume: 46
Issue: 1
Pages: 35～42
Publication date of volume/issue (W3CDTF): 1999
ISSN (Periodical Title): 0452-4160
ISSN-L (Periodical Title): 0452-4160
Publication (Periodical Title): 神戸 : 甲南大学
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM2
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z14-125
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 4815775
http://id.ndl.go.jp/bib/4815775
Bibliographic Record Category (NDL): 632