解説(311)A面GaAs段差基板上にMBE成長により作製した模型P-n接合光電子デバイス

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Material Type: 記事
Title: 解説(311)A面GaAs段差基板上にMBE成長により作製した模型P-n接合光電子デバイス
Author/Editor: Pablo O. Vaccaro
黒柳和良
Author Heading: Pablo O. Vaccaro
黒柳和良
Periodical title: 応用物理
No. or year of volume/issue: 68(12) 1999.12
Volume: 68
Issue: 12
Pages: 1359～1365
Publication date of volume/issue (W3CDTF): 1999-12
ISSN (Periodical Title): 0369-8009
ISSN-L (Periodical Title): 0369-8009
Publication (Periodical Title): 東京 : 応用物理学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM17
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-243
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 4928366
http://id.ndl.go.jp/bib/4928366
Bibliographic Record Category (NDL): 632