解説電流磁場印加引上げ法(EMCZ)によるシリコン単結晶中の酸素濃度制御(小特集シリコン結晶成長における酸素輸送と欠陥制御)

Journal name: 日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth 26(5) 1999

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Material Type: 記事
Title: 解説電流磁場印加引上げ法(EMCZ)によるシリコン単結晶中の酸素濃度制御
Author/Editor: 渡辺匡人
江口実
王偉他
Series Title: 小特集シリコン結晶成長における酸素輸送と欠陥制御
Author Heading: 渡辺匡人
江口実
王偉
Periodical title: 日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth
No. or year of volume/issue: 26(5) 1999
Volume: 26
Issue: 5
Pages: 235～241
Publication date of volume/issue (W3CDTF): 1999
ISSN (Periodical Title): 0385-6275
ISSN-L (Periodical Title): 0385-6275
Publication (Periodical Title): 大阪 : 日本結晶成長学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-339
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 4977445
http://id.ndl.go.jp/bib/4977445
Bibliographic Record Category (NDL): 632