Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4 Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties

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Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4 Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5382674
Material type
記事
Author
Kouichi Nakahataほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2000-06
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 39(6A) (通号 521) 2000.06
Publication Page
p.3294~3301
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Detailed bibliographic record

Summary, etc.:

Polycrystalline silicon (<I>poly</I>-Si) films were fabricated by very high frequency (VHF) plasma enhanced (PE) chemical vapor deposition (CVD) from ...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Kouichi Nakahata
kazuyoshi Ro
Atsushi Suemasu 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
39(6A) (通号 521) 2000.06
Volume
39
Issue
6A
Sequential issue number
521
Pages
3294~3301