An Improved Physical Model for the Analysis of High Frequency Active Devices

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 100(306) 2000.9.22

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Material Type: 記事
Title: An Improved Physical Model for the Analysis of High Frequency Active Devices
Author/Editor: M.A. Alsunaidi
S. Kawasaki
Author Heading: M.A. Alsunaidi
S. Kawasaki
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 100(306) 2000.9.22
Volume: 100
Issue: 306
Pages: 61～65
Publication date of volume/issue (W3CDTF): 2000-09-22
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: GaAs MESFETs
Boltzmann's transport equation
FDTD method
Physical modeling
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ED2000-155
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 5516535
http://id.ndl.go.jp/bib/5516535
Bibliographic Record Category (NDL): 632