Oxygen-Related Defects Introduced by As〔+〕-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams

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Oxygen-Related Defects Introduced by As〔+〕-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5575087
Material type
記事
Author
Akira Uedonoほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2000-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 39(11) (通号 529) 2000.11
Publication Page
p.6126~6129
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Detailed bibliographic record

Summary, etc.:

The depth distributions and species of defects in 50 keV As<FONT SIZE="-1"><SUP>+</SUP></FONT>-implanted Si with a cap layer (SiO<FONT SIZE="-1"><SUB>...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Akira Uedono
Makoto Muramatsu
Tomohiro Ubukata 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
39(11) (通号 529) 2000.11
Volume
39
Issue
11
Sequential issue number
529
Pages
6126~6129