研究紹介 GsAs/MnSbグラニュラー構造における磁気抵抗スイッチ効果 (半導体スピンエレクトロニクス--半導体研究の新しい流れ)

研究紹介 GsAs/MnSbグラニュラー構造における磁気抵抗スイッチ効果

(半導体スピンエレクトロニクス--半導体研究の新しい流れ)

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Material Type: 記事
Title: 研究紹介 GsAs/MnSbグラニュラー構造における磁気抵抗スイッチ効果
Author/Editor: 秋永広幸
水口将輝
小野寛太他
Series Title: 半導体スピンエレクトロニクス--半導体研究の新しい流れ
Author Heading: 秋永広幸
水口将輝
小野寛太
Periodical title: 応用物理
No. or year of volume/issue: 70(3) 2001.3
Volume: 70
Issue: 3
Pages: 313～316
Publication date of volume/issue (W3CDTF): 2001-03
ISSN (Periodical Title): 0369-8009
ISSN-L (Periodical Title): 0369-8009
Publication (Periodical Title): 東京 : 応用物理学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: magnetoresistive switch effect
nanocluster
breakdown
NDLC: ZM17
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-243
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 5690987
http://id.ndl.go.jp/bib/5690987
Bibliographic Record Category (NDL): 632