触媒CVD法による高移動度poly-Si TFTの作製 (低温ポリSi TFTと有機EL技術)

触媒CVD法による高移動度poly-Si TFTの作製

(低温ポリSi TFTと有機EL技術)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 101(16) 2001.4.19

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Material Type: 記事
Title: 触媒CVD法による高移動度poly-Si TFTの作製
Author/Editor: 河西弘人
久須本典煕
山中英雄他
Series Title: 低温ポリSi TFTと有機EL技術
Author Heading: 河西弘人
久須本典煕
山中英雄
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 101(16) 2001.4.19
Volume: 101
Issue: 16
Pages: 19～25
Publication date of volume/issue (W3CDTF): 2001-04-19
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: ポリシリコン
アモルファスシリコン
薄膜トランジスタ
不純物
酸素
polycrystalline silicon
amorphous silicon
thin film transistor
contamination
oxygen
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2001-4
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 5775367
http://id.ndl.go.jp/bib/5775367
Bibliographic Record Category (NDL): 632