Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond (Solid State Devices & Materials)

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Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond(Solid State Devices & Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5783114
Material type
記事
Author
Hyun Seok Limほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2001-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 40(4B) (通号 538) (増刊) 2001.4
Publication Page
p.2669~2673
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Detailed bibliographic record

Summary, etc.:

TiCl<FONT SIZE="-1"><SUB>4</SUB></FONT>-based atomic layer deposition (ALD)- and chemical vapor deposition (CVD)-TiN films are applied as the metal to...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hyun Seok Lim
Sang Bom Kanag
In Sang Jeon 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
40(4B) (通号 538) (増刊) 2001.4
Volume
40
Issue
4B
Sequential issue number
538