Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology (Solid State Devices & Materials)

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Influences of Residual Chlorine in CVD-TiN Gate Electrode on the Gate Oxide Reliability in Multiple-Thickness Oxide Technology(Solid State Devices & Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5783133
Material type
記事
Author
Masaru Moriwakiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2001-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 40(4B) (通号 538) (増刊) 2001.4
Publication Page
p.2679~2684
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Detailed bibliographic record

Summary, etc.:

Influences of the chemical vapor deposition (CVD)-TiN gate process on gate oxide integrity have been studied. The gate leakage characteristic and reli...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Masaru Moriwaki
Takayuki Yamada
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
40(4B) (通号 538) (増刊) 2001.4
Volume
40
Issue
4B
Sequential issue number
538