High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode (Solid State Devices & Materials)

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High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode(Solid State Devices & Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5784884
Material type
記事
Author
Taizoh Sadohほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2001-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 40(4B) (通号 538) (増刊) 2001.4
Publication Page
p.2775~2778
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Detailed bibliographic record

Summary, etc.:

The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> gates was demonstrated. First,...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Taizoh Sadoh
Yi-Qun Zhang
Hiroki Yasunaga 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
40(4B) (通号 538) (増刊) 2001.4
Volume
40
Issue
4B
Sequential issue number
538