Crystallization of 3C-SiC(III) Thin Films Grown on Si(III) Substrates by Post Thermal Annealing

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Crystallization of 3C-SiC(III) Thin Films Grown on Si(III) Substrates by Post Thermal Annealing

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5985858
Material type
記事
Author
Hae Gwon Leeほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2001-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 40(11) (通号 548) 2001.11
Publication Page
p.6304~6306
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Detailed bibliographic record

Summary, etc.:

Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown ...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hae Gwon Lee
Tae Won Kang
Sung Ui Hong 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
40(11) (通号 548) 2001.11
Volume
40
Issue
11
Sequential issue number
548
Pages
6304~6306