Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP (Special Issue: Indium Phosphide and Related Materials)

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Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP(Special Issue: Indium Phosphide and Related Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6098713
Material type
記事
Author
Ikuo Suemuneほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-02
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(2B) (通号 552) (Special Issue) 2002.2
Publication Page
p.1030~1033
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Detailed bibliographic record

Summary, etc.:

Erbium (Er) doping in GaNP during growth by metalorganic molecular-beam epitaxy was studied. Nitrogen (N) doping in GaP was possible up to ∼ 2% and ex...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Ikuo Suemune
Togo Shimozawa
Katsuhiro Uesugi 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(2B) (通号 552) (Special Issue) 2002.2
Volume
41
Issue
2B
Sequential issue number
552