埋め込みp層を有したAlGaN/GaN HEMTの作製と評価

Journal name: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems 122(7) 2002.7

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Material Type: 記事
Title: 埋め込みp層を有したAlGaN/GaN HEMTの作製と評価
Author/Editor: 塩島謙次
末光哲也
重川直輝
Author Heading: 塩島謙次
末光哲也
重川直輝
Periodical title: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
No. or year of volume/issue: 122(7) 2002.7
Volume: 122
Issue: 7
Pages: 1085～1088
Publication date of volume/issue (W3CDTF): 2002-07
ISSN (Periodical Title): 0385-4221
ISSN-L (Periodical Title): 0385-4221
Publication (Periodical Title): 東京 : 電気学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: キャリア閉じ込め効果
buried p-layer
carrier confinement
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-795
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 6204482
http://id.ndl.go.jp/bib/6204482
Bibliographic Record Category (NDL): 632