Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability(NBTI) of P-Channel MOSFETs (AWAD2002(Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability(NBTI) of P-Channel MOSFETs

(AWAD2002(Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

Call No. (NDL): Z16-940
Bibliographic ID of National Diet Library: 6266768

Material type: 記事

Author: Wan-Ju Chiangほか

Publisher: 東京 : 電子情報通信学会

Publication date: 2002-07-01

Material Format: Paper

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 102(178) 2002.7.1

Publication Page: p.13～16

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Paper

Material Type: 記事
Title: Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability(NBTI) of P-Channel MOSFETs
Author/Editor: Wan-Ju Chiang
Da-Yuan Lee
Wen-Tai Lu 他
Series Title: AWAD2002(Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
Author Heading: Wan-Ju Chiang
Da-Yuan Lee
Wen-Tai Lu
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 102(178) 2002.7.1
Volume: 102
Issue: 178
Pages: 13～16
Publication date of volume/issue (W3CDTF): 2002-07-01
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: negative-bias-temperature-instability
PMOSFETs
Thin gate oxide
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2002-69
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 6266768
http://id.ndl.go.jp/bib/6266768
Bibliographic Record Category (NDL): 632