Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon

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Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6305468
Material type
記事
Author
Masayuki Yoshidaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-09
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(9) (通号 564) 2002.9
Publication Page
p.5493~5502
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Detailed bibliographic record

Summary, etc.:

Four diffusion models based on the pair diffusion models of vacancy and interstitial mechanisms are adopted for the simulation of six experimental pro...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Masayuki Yoshida
Shuji Tanaka
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(9) (通号 564) 2002.9
Volume
41
Issue
9
Sequential issue number
564
Pages
5493~5502