Copper Distribution near a SiO2/Si Interface under Low-Temperature Annealing

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Copper Distribution near a SiO2/Si Interface under Low-Temperature Annealing

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6333960
Material type
記事
Author
Kazuyuki Hozawaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-10
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(10) (通号 565) 2002.10
Publication Page
p.5887~5893
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Detailed bibliographic record

Summary, etc.:

In relation to the thickness of a surface SiO<FONT SIZE="-1"><SUB>2</SUB></FONT> film, the behavior of copper atoms existing at the SiO<FONT SIZE="-1"...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Kazuyuki Hozawa
Seiichi Isomae
Jiro Yugami
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(10) (通号 565) 2002.10
Volume
41
Issue
10
Sequential issue number
565
Pages
5887~5893