Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

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Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6357862
Material type
記事
Author
Satoshi Inoueほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(11A) (通号 566) 2002.11
Publication Page
p.6313~6319
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Detailed bibliographic record

Summary, etc.:

The reliability of low-temperature-processed (≤425°C) polycrystalline-silicon thin film transistors (poly-Si TFTs) was investigated. For n-channel TFT...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Satoshi Inoue
Hiroyuki Ohshima
Tatsuya Shimoda
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(11A) (通号 566) 2002.11
Volume
41
Issue
11A
Sequential issue number
566
Pages
6313~6319