強誘電体ゲートトランジスタ用SBT系材料の形成と評価 (特集:プロセスクリーン化と新プロセス技術)

強誘電体ゲートトランジスタ用SBT系材料の形成と評価

(特集:プロセスクリーン化と新プロセス技術)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 102(416) 2002.10.29

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Material Type: 記事
Title: 強誘電体ゲートトランジスタ用SBT系材料の形成と評価
Author/Editor: 徳光永輔
貴志真士
Series Title: 特集:プロセスクリーン化と新プロセス技術
Author Heading: 徳光永輔
貴志真士
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 102(416) 2002.10.29
Volume: 102
Issue: 416
Pages: 15～20
Publication date of volume/issue (W3CDTF): 2002-10-29
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 強誘電体メモリ
FeRAM
強誘電体ゲートトランジスタ
SrBi2Ta2O9
SBT
Ferroelectric Random Access Memory
Ferroelectric-Gate Transistor
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2002-199
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 6360318
http://id.ndl.go.jp/bib/6360318
Bibliographic Record Category (NDL): 632