Metalorganic Chemical Vapor Deposition of Thin Film ZrO2 and Pb(Zr,Ti)O3: Precursor Chemistry and Process Characteristics (Special Issue Ferroelectric Materials and Their Applications)

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Metalorganic Chemical Vapor Deposition of Thin Film ZrO2 and Pb(Zr,Ti)O3: Precursor Chemistry and Process Characteristics(Special Issue Ferroelectric Materials and Their Applications)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6370750
Material type
記事
Author
Ing-Shin Chenほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(11B) (通号 567) (Special Issue) 2002.11
Publication Page
p.6695~6700
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Detailed bibliographic record

Summary, etc.:

Metalorganic chemical vapor deposition (MOCVD) process characteristics of several zirconium source reagents were investigated. These source reagents i...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Ing-Shin Chen
Bryan C. Hendrix
Steven M. Bilodeau 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(11B) (通号 567) (Special Issue) 2002.11
Volume
41
Issue
11B
Sequential issue number
567