Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam (Special Issue: Solid State Devices & Materials)

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Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam(Special Issue: Solid State Devices & Materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6522973
Material type
記事
Author
Taizoh Sadohほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2003-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 42(4B) (通号 574) (Special Issue) 2003.4
Publication Page
p.1855~1858
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Detailed bibliographic record

Summary, etc.:

The dose-dependent etching characteristics of SiO<SUB>2</SUB> films irradiated with 40 keV Si<SUP>2+</SUP> focused ion beams (FIBs) were comprehensive...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Taizoh Sadoh
Hiroomi Eguchi
Atsushi Kenjo 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
42(4B) (通号 574) (Special Issue) 2003.4
Volume
42
Issue
4B
Sequential issue number
574