Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon

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Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6785172
Material type
記事
Author
Eddy Simonほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2003-12
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 42(12) (通号 586) 2003.12
Publication Page
p.7184~7188
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Detailed bibliographic record

Summary, etc.:

This work describes the radiation defects formed in high-temperature (450°C) 1 MeV electron-irradiated n-type Czochralski (Cz) silicon. A dedicated ir...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Eddy Simon
Joan Marc Rafi
Cor Claeys 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
42(12) (通号 586) 2003.12
Volume
42
Issue
12
Sequential issue number
586
Pages
7184~7188