Improvement of Oxidation-Induced Ge Condensation Method by H〔+〕 Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator (Special Issue: Solid State Devices & Materials)
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- Material Type
- 記事
- Author/Editor
- Taizoh SadohRyo MatsuuraMasaharu Ninomiya 他
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 44(4B) (通号 611) (Special Issue) 2005.4
- Volume
- 44
- Issue
- 4B
- Sequential issue number
- 611