Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation

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Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
7337495
Material type
記事
Author
Mitsuhiro Hanabeほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2005-06
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 44(6A) (通号 614) 2005.6
Publication Page
p.3842~3847
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Detailed bibliographic record

Summary, etc.:

Two-dimensional (2-D) electron plasma in a submicron channel of a high-electron mobility transistor (HEMT) is excited by interband photoexcitation, re...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Mitsuhiro Hanabe
Taiichi Otsuji
Takuma Ishibashi 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
44(6A) (通号 614) 2005.6
Volume
44
Issue
6A
Sequential issue number
614
Pages
3842~3847