Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels

(先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 105(157) 2005.6.30

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Material Type: 記事
Title: Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels
Author/Editor: Shigeaki Zaima
Akira Sakai
Masaki Ogawa 他
Series Title: 先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005)
Author Heading: Shigeaki Zaima
Akira Sakai
Masaki Ogawa
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 105(157) 2005.6.30
Volume: 105
Issue: 157
Pages: 5～8
Publication date of volume/issue (W3CDTF): 2005-06-30
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: Epitaxial Growth
Dislocation
High Mobility
Strained-Si
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2005-114
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 7381815
http://id.ndl.go.jp/bib/7381815
Bibliographic Record Category (NDL): 632