RF Diamond Transistors: Current Status and Future Prospects

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RF Diamond Transistors: Current Status and Future Prospects

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
7701440
Material type
記事
Author
Hitoshi Umezawaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2005-11
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 44(11) (通号 622) 2005.11
Publication Page
p.7789~7794
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Detailed bibliographic record

Summary, etc.:

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. <I>f</I><SUB>T</SUB> and <I>f</I><SUB>max</SUB> of 23 an...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hitoshi Umezawa
Kazuyuki Hirama
Tatsuya Arai 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
44(11) (通号 622) 2005.11
Volume
44
Issue
11
Sequential issue number
622
Pages
7789~7794