Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2μm Wavelength Region Grown on InP Substrates (Special Issue: Solid State Devices & Materials)
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- Material Type
- 記事
- Author/Editor
- Yuichi KawamuraTomokatsu NakagawaNaohisa Inoue
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 45(4B) (通号 631) (Special Issue) 2006.4
- Volume
- 45
- Issue
- 4B
- Sequential issue number
- 631