High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

Journal name: Japanese journal of applied physics. Part 2, Letters & express letters 45(37-41) (通号 446) 2006.10

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Material Type: 記事
Title: High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
Author/Editor: Takahiro Fujii
Norio Tsuyukuchi
Motoaki Iwaya 他
Author Heading: Takahiro Fujii
Norio Tsuyukuchi
Motoaki Iwaya
Periodical title: Japanese journal of applied physics. Part 2, Letters & express letters
No. or year of volume/issue: 45(37-41) (通号 446) 2006.10
Volume: 45
Issue: 37-41
Sequential issue number: 446
Pages: L1048～1050
Publication date of volume/issue (W3CDTF): 2006-10
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: JHFET
enhancement mode
leakage current
on/off ratio of drain-source current
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z54-J337
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8519967
http://id.ndl.go.jp/bib/8519967
Bibliographic Record Category (NDL): 632