SiC基板上に作製した窒化物半導体デバイスの現状と将来 (特集:次世代半導体デバイスとしてのSiC単結晶を用いたオプトメカトロニクス技術)

SiC基板上に作製した窒化物半導体デバイスの現状と将来

(特集:次世代半導体デバイスとしてのSiC単結晶を用いたオプトメカトロニクス技術)

Journal name: 光技術コンタクト = Optical and electro-optical engineering contact 44(12) (通号 517) 2006.12

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Material Type: 記事
Title: SiC基板上に作製した窒化物半導体デバイスの現状と将来
Author/Editor: 牧本俊樹
Series Title: 特集:次世代半導体デバイスとしてのSiC単結晶を用いたオプトメカトロニクス技術
Author Heading: 牧本俊樹
Periodical title: 光技術コンタクト = Optical and electro-optical engineering contact
No. or year of volume/issue: 44(12) (通号 517) 2006.12
Volume: 44
Issue: 12
Sequential issue number: 517
Pages: 699～708
Publication date of volume/issue (W3CDTF): 2006-12
ISSN (Periodical Title): 0913-7289
ISSN-L (Periodical Title): 0913-7289
Publication (Periodical Title): 東久留米 : 光学工業技術協会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-362
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8618849
http://id.ndl.go.jp/bib/8618849
Bibliographic Record Category (NDL): 632