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雑誌電子情報通信学会技術研究報告 : 信学技報
Volume number107(189)-107(195) 20070800-20070800
ArticleSOI膜厚5nmの(...

SOI膜厚5nmの(100)面極薄nMOSFETにおける移動度ユニバーサリティ (シリコン材料・デバイス)

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SOI膜厚5nmの(100)面極薄nMOSFETにおける移動度ユニバーサリティ

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
8895996
Material type
記事
Author
清水 健ほか
Publisher
東京 : 電子情報通信学会
Publication date
2007-08
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 107(194) 2007.8.23・24
Publication Page
p.107～111
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Paper

Material Type
記事
Title
SOI膜厚5nmの(100)面極薄nMOSFETにおける移動度ユニバーサリティ
Author/Editor
清水 健
平本 俊郎
Series Title
シリコン材料・デバイス
Author Heading
清水 健
平本 俊郎
Alternative Title
Experimental study on mobility universality in (100) ultra thin body nMOSFET with SOI thickness of 5nm
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
107(194) 2007.8.23・24
Volume
107
Issue
194