厚膜MOS電源スイッチを用いた高速電源遮断技術によるモバイルプロセッサの低電力化 (集積回路)

厚膜MOS電源スイッチを用いた高速電源遮断技術によるモバイルプロセッサの低電力化

(集積回路)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 107(195) 2007.8.23・24

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Material Type: 記事
Title: 厚膜MOS電源スイッチを用いた高速電源遮断技術によるモバイルプロセッサの低電力化
Author/Editor: 福岡一樹
小澤治
森涼他
Series Title: 集積回路
Author Heading: 福岡一樹
小澤治
森涼
Alternative Title: A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 107(195) 2007.8.23・24
Volume: 107
Issue: 195
Pages: 69～73
Publication date of volume/issue (W3CDTF): 2007-08
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 厚膜MOS電源スイッチ
高速復帰
リーク電流低減
突入電流
PVT変動
thick-gate-oxide power switch
fast wake-up
leakage current reduction
rush current
PVT variation
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ICD2007-81
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8896222
http://id.ndl.go.jp/bib/8896222
Bibliographic Record Category (NDL): 632