32nm世代以降のCMOS向けメタルゲート/High-k絶縁膜技術の導入によるMOSFET特性の変化 (集積回路)

32nm世代以降のCMOS向けメタルゲート/High-k絶縁膜技術の導入によるMOSFET特性の変化

(集積回路)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 107(195) 2007.8.23・24

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Material Type: 記事
Title: 32nm世代以降のCMOS向けメタルゲート/High-k絶縁膜技術の導入によるMOSFET特性の変化
Author/Editor: 小山正人
小池正浩
上牟田雄一他
Series Title: 集積回路
Author Heading: 小山正人
小池正浩
上牟田雄一
Alternative Title: Influence of metal gate/high-k technology introduction on MOSFET device characteristics beyond 32nm node
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 107(195) 2007.8.23・24
Volume: 107
Issue: 195
Pages: 101～106
Publication date of volume/issue (W3CDTF): 2007-08
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: high-kゲート絶縁膜
メタルゲート
32nm世代
MOSFET
High-k gate dielectric
metal-gate electrode
32nm node
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ICD2007-87
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8896252
http://id.ndl.go.jp/bib/8896252
Bibliographic Record Category (NDL): 632