Pb置換Bi2Sr2CuO6+δ単結晶のホール係数測定によるキャリア濃度の決定 (強磁場超伝導の研究--高温超伝導体)

Pb置換Bi2Sr2CuO6+δ単結晶のホール係数測定によるキャリア濃度の決定

(強磁場超伝導の研究--高温超伝導体)

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Material Type: 記事
Title: Pb置換Bi2Sr2CuO6+δ単結晶のホール係数測定によるキャリア濃度の決定
Author/Editor: 奥村直幸
工藤一貴
西嵜照和他
Series Title: 強磁場超伝導の研究--高温超伝導体
Author Heading: 奥村直幸
工藤一貴
西嵜照和
Alternative Title: Estimation of carrier concentration of Pb doped Bi2Sr2CuO6+δ single crystals by measuring hall coefficient
Periodical title: 東北大学金属材料研究所強磁場超伝導材料研究センター年次報告
No. or year of volume/issue: 2006年度
Volume: 2006年度
Pages: 16～18
Publication date of volume/issue (W3CDTF): 2006
Publication (Periodical Title): [仙台] : 東北大学金属材料研究所附属強磁場超伝導材料研究センター
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-672
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8899408
http://id.ndl.go.jp/bib/8899408
Bibliographic Record Category (NDL): 632