次世代高誘電率ゲート...

次世代高誘電率ゲート絶縁膜HfSiONのしきい値劣化機構と寿命予測技術

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次世代高誘電率ゲート絶縁膜HfSiONのしきい値劣化機構と寿命予測技術

Call No. (NDL)
Z16-317
Bibliographic ID of National Diet Library
8901129
Material type
記事
Author
平野 泉ほか
Publisher
東京 : 東芝技術企画部
Publication date
2007-07
Material Format
Paper
Journal name
東芝レビュー = Toshiba review / 東芝ビジネスエキスパート株式会社ビジネスソリューション事業部 編集・制作 62(7) (通号 697) 2007.7
Publication Page
p.43~47
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Paper

Material Type
記事
Author/Editor
平野 泉
山口 豪
関根 克行
Alternative Title
Degradation mechanism and lifetime projection of HfSiON as alternative high-k gate dielectric
Periodical title
東芝レビュー = Toshiba review / 東芝ビジネスエキスパート株式会社ビジネスソリューション事業部 編集・制作
No. or year of volume/issue
62(7) (通号 697) 2007.7
Volume
62
Issue
7
Sequential issue number
697