Performance enhancement by local strain in <110> channel n-channel metal-oxide-semiconductor field-effect transistors on (111) substrate

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Performance enhancement by local strain in <110> channel n-channel metal-oxide-semiconductor field-effect transistors on (111) substrate

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
8909152
Material type
記事
Author
Wen-Cheng Loほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2007-09
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46(9A) (通号 659) 2007.9
Publication Page
p.5715~5718
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Digital

Material Type
記事
Author/Editor
Wen-Cheng Lo
Ya-Hsin Kuo
Yao-Jen Lee 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
46(9A) (通号 659) 2007.9
Volume
46
Issue
9A
Sequential issue number
659
Pages
5715~5718