シリサイド技術が次世代トランジスタ形成のカギとなる

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Material Type: 記事
Title: シリサイド技術が次世代トランジスタ形成のカギとなる
Author/Editor: Ruth Dejule
Author Heading: Ruth Dejule
Alternative Title: Silicides support advanced gate stacks
Periodical title: Semiconductor international. 日本版
No. or year of volume/issue: 4(8) 2007.8
Volume: 4
Issue: 8
Pages: 29～33
Publication date of volume/issue (W3CDTF): 2007-08
ISSN (Periodical Title): 1349-6425
ISSN-L (Periodical Title): 1349-6425
Publication (Periodical Title): 東京 : リード・ビジネス・インフォメーション
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN33
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z74-E304
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 8914278
http://id.ndl.go.jp/bib/8914278
Bibliographic Record Category (NDL): 632