Nucleation-controlled metal-induced lateral crystallization of amorphous Si[1-x]Ge[x] with whole Ge fraction on insulator (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)
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- Material Type
- 記事
- Author/Editor
- Taizoh SadohKaoru TokoHiroshi Kanno 他
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics : JJAP
- No. or year of volume/issue
- 47(3) (2) 2008.3
- Volume
- 47
- Issue
- 3
- Other Volume
- 2